Nature Communications (Jan 2018)
Electrically reversible cracks in an intermetallic film controlled by an electric field
- Z. Q. Liu,
- J. H. Liu,
- M. D. Biegalski,
- J.-M. Hu,
- S. L. Shang,
- Y. Ji,
- J. M. Wang,
- S. L. Hsu,
- A. T. Wong,
- M. J. Cordill,
- B. Gludovatz,
- C. Marker,
- H. Yan,
- Z. X. Feng,
- L. You,
- M. W. Lin,
- T. Z. Ward,
- Z. K. Liu,
- C. B. Jiang,
- L. Q. Chen,
- R. O. Ritchie,
- H. M. Christen,
- R. Ramesh
Affiliations
- Z. Q. Liu
- School of Materials Science and Engineering, Beihang University
- J. H. Liu
- School of Materials Science and Engineering, Beihang University
- M. D. Biegalski
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory
- J.-M. Hu
- Department of Materials Science and Engineering, The Pennsylvania State University
- S. L. Shang
- Department of Materials Science and Engineering, The Pennsylvania State University
- Y. Ji
- Department of Materials Science and Engineering, The Pennsylvania State University
- J. M. Wang
- School of Materials Science and Engineering, Beihang University
- S. L. Hsu
- Department of Materials Science and Engineering, University of California
- A. T. Wong
- Materials Science and Technology Division, Oak Ridge National Laboratory
- M. J. Cordill
- Erich Schmid Institute of Materials Science, Austrian Academy of Sciences, and Department of Material Physics, Montanuniversität Leoben
- B. Gludovatz
- School of Mechanical and Manufacturing Engineering, UNSW Sydney
- C. Marker
- Department of Materials Science and Engineering, The Pennsylvania State University
- H. Yan
- School of Materials Science and Engineering, Beihang University
- Z. X. Feng
- School of Materials Science and Engineering, Beihang University
- L. You
- School of Optical and Electronic Information, Huazhong University of Science and Technology
- M. W. Lin
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory
- T. Z. Ward
- Materials Science and Technology Division, Oak Ridge National Laboratory
- Z. K. Liu
- Department of Materials Science and Engineering, The Pennsylvania State University
- C. B. Jiang
- School of Materials Science and Engineering, Beihang University
- L. Q. Chen
- Department of Materials Science and Engineering, The Pennsylvania State University
- R. O. Ritchie
- Department of Materials Science and Engineering, University of California
- H. M. Christen
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory
- R. Ramesh
- Department of Materials Science and Engineering, University of California
- DOI
- https://doi.org/10.1038/s41467-017-02454-8
- Journal volume & issue
-
Vol. 9,
no. 1
pp. 1 – 7
Abstract
Electric-field-induced cracks are generally detrimental to functionality of ferroelectric ceramics. Liu et al. use an intermetallic alloy and ferroelectric oxide junction to mediate the reversible formation of cracks at nanoscales, resulting in colossal electroresistance modulation for memory applications.
