Crystal Structure and Microwave Dielectric Property of <i>x</i>MgO-SiO<sub>2</sub> (<i>x</i> = 1~2) System for 5G Applications
Yan Wang,
Jiajing Li,
Haipeng Zhu,
Qilei Wang,
Tulai Sun,
Tao Ni,
Yanghong Lin,
Yu Liu,
Minmin Mao,
Ji Hu,
Bing Liu,
Hadi Barzegar Bafrooei,
Zhongyan Ma,
Yingjie Ren,
Feng Shi,
Ehsan Taheri-Nassaj,
Dawei Wang,
Kaixin Song
Affiliations
Yan Wang
College of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, China
Jiajing Li
College of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, China
Haipeng Zhu
College of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, China
Qilei Wang
College of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, China
Tulai Sun
Center for Electron Microscopy, State Key Laboratory Breeding Base of Green Chemistry Synthesis Technology, Zhejiang University of Technology, Hangzhou 310014, China
Tao Ni
College of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, China
Yanghong Lin
College of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, China
Yu Liu
College of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, China
Minmin Mao
College of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, China
Ji Hu
College of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, China
Bing Liu
College of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, China
Hadi Barzegar Bafrooei
College of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, China
Zhongyan Ma
Institute of Communication Materials, Zhejiang Wazam New Materials Co., Ltd., Hangzhou 311121, China
Yingjie Ren
Institute of Communication Materials, Zhejiang Wazam New Materials Co., Ltd., Hangzhou 311121, China
Feng Shi
School of Materials Science and Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, China
Ehsan Taheri-Nassaj
Department of Materials Science and Engineering, Tarbiat Modares University, Tehran 14115-143, Iran
Dawei Wang
School of Instrumentation Science and Engineering, Harbin Institute of Technology, Harbin 150080, China
Kaixin Song
College of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, China
Mg2SiO4 and MgSiO3 ceramics with superior microwave dielectric properties are considered to be promising candidates for 5G applications. However, a slight deviation from the stoichiometric Mg/Si ratio will significantly influence their microwave dielectric properties, which will hinder their practical applications. In this work, the xMgO-SiO2 (x = 1~2) ceramics were synthesized by a solid-state reaction method. The influence of the Mg/Si ratio x on the crystalline phase, microstructure, and microwave dielectric properties was investigated through X-ray diffraction (XRD), a scanning electron microscope (SEM), and the resonant cavity method. The XRD patterns revealed the coexistence of Mg2SiO4 and MgSiO3 within the x range of 1~2, which was further demonstrated by the energy-dispersive X-ray spectra. The SEM images show a typical polycrystalline morphology of ceramics with an inhomogeneous grain size distribution. It is found that the microwave dielectric properties fluctuate at both sides of the x range while those remain relatively stable with minor changes at the intermediate components, indicating an obvious low composition dependence helpful for practical applications. Further, a demonstrator of a microstrip patch antenna for 5G applications using the 1.5MgO-SiO2 ceramic was designed and fabricated, and a return loss of −16.2 dB was demonstrated, which demonstrated the potential applications.
