Accessing ratios of quantized resistances in graphene p–n junction devices using multiple terminals

Dinesh Patel; Martina Marzano; Chieh-I Liu; Heather M. Hill; Mattias Kruskopf; Hanbyul Jin; Jiuning Hu; David B. Newell; Chi-Te Liang; Randolph Elmquist; Albert F. Rigosi

doi:10.1063/1.5138901

AIP Advances (Feb 2020)

Accessing ratios of quantized resistances in graphene p–n junction devices using multiple terminals

Dinesh Patel,
Martina Marzano,
Chieh-I Liu,
Heather M. Hill,
Mattias Kruskopf,
Hanbyul Jin,
Jiuning Hu,
David B. Newell,
Chi-Te Liang,
Randolph Elmquist,
Albert F. Rigosi

Affiliations

Dinesh Patel: Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899-8171, USA
Martina Marzano: Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899-8171, USA
Chieh-I Liu: Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899-8171, USA
Heather M. Hill: Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899-8171, USA
Mattias Kruskopf: Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899-8171, USA
Hanbyul Jin: Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899-8171, USA
Jiuning Hu: Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899-8171, USA
David B. Newell: Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899-8171, USA
Chi-Te Liang: Department of Physics, National Taiwan University, Taipei 10617, Taiwan
Randolph Elmquist: Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899-8171, USA
Albert F. Rigosi: Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899-8171, USA

DOI: https://doi.org/10.1063/1.5138901
Journal volume & issue: Vol. 10, no. 2
pp. 025112 – 025112-6

Abstract

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The utilization of multiple current terminals on millimeter-scale graphene p–n junction devices has enabled the measurement of many atypical, fractional multiples of the quantized Hall resistance at the ν = 2 plateau (RH ≈ 12 906 Ω). These fractions take the form abRH and can be determined both analytically and by simulations. These experiments validate the use of either the LTspice circuit simulator or the analytical framework recently presented in similar work. Furthermore, the production of several devices with large-scale junctions substantiates the approach of using simple ultraviolet lithography to obtain junctions of sufficient sharpness.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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