Epitaxial growth of Ce-doped (Pb,Gd)3(Al,Ga)5O12 films and their optical and scintillation properties

Dmitrii A. Vasil'ev; Dmitry A. Spassky; Shunsuke Kurosawa; Sergey I. Omelkov; Natalia V. Vasil'eva; Victor G. Plotnichenko; Andrey V. Khakhalin; Valery V. Voronov; Vladimir V. Kochurikhin

Journal of Science: Advanced Materials and Devices (Mar 2020)

Epitaxial growth of Ce-doped (Pb,Gd)3(Al,Ga)5O12 films and their optical and scintillation properties

Dmitrii A. Vasil'ev,
Dmitry A. Spassky,
Shunsuke Kurosawa,
Sergey I. Omelkov,
Natalia V. Vasil'eva,
Victor G. Plotnichenko,
Andrey V. Khakhalin,
Valery V. Voronov,
Vladimir V. Kochurikhin

Affiliations

Dmitrii A. Vasil'ev: Prokhorov General Physics Institute of the Russian Academy of Sciences, Vavilov Str., 38, 119991, Moscow, Russia
Dmitry A. Spassky: National University of Science and Technology (MISIS), Leninskiy Prospect, 4, 119049, Moscow, Russia; Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Leninskie Gory, 119991, Moscow, Russia; Corresponding author. National University of Science and Technology (MISIS), Leninskiy Prospect, 4, 119049 Moscow, Russia.
Shunsuke Kurosawa: New Industry Creation Hatchery Center, Tohoku University, Sendai, 980-8579, Japan; Department of Physics, Yamagata University, Yamagata, 990-8560, Japan
Sergey I. Omelkov: Institute of Physics, University of Tartu, W. Ostwald str. 1, 50411, Tartu, Estonia
Natalia V. Vasil'eva: Prokhorov General Physics Institute of the Russian Academy of Sciences, Vavilov Str., 38, 119991, Moscow, Russia
Victor G. Plotnichenko: Fiber Optics Research Center, Russian Academy of Sciences, Vavilov Str., 38, 119333, Moscow, Russia
Andrey V. Khakhalin: Physics Department, Lomonosov Moscow State University, Leninskie Gory, 119991, Moscow, Russia
Valery V. Voronov: Prokhorov General Physics Institute of the Russian Academy of Sciences, Vavilov Str., 38, 119991, Moscow, Russia
Vladimir V. Kochurikhin: Prokhorov General Physics Institute of the Russian Academy of Sciences, Vavilov Str., 38, 119991, Moscow, Russia

Journal volume & issue: Vol. 5, no. 1
pp. 95 – 103

Abstract

Read online

Се-doped (Pb,Gd)3(Al,Ga)5O12 single crystalline garnet films were grown using liquid-phase epitaxy from four series of supercooled PbO–B2O3-based melt solutions on Gd3Ga5O12 and Gd3Al2.26Ga2.74O12 single crystal substrates. The optical and scintillation properties of the epitaxial garnet films were studied. The 5d-4f emission of Ce3+ ions within 450–650 nm was observed. The highest pulsed cathodoluminescence yield and scintillation yield values under 133Ba excitation for the Pb0.01Ce0.02Gd2.97Al3.13Ga1.87O12 film were 43,100 photons/MeV and 20,000 photons/MeV, respectively. The pulsed cathodoluminescence decay times of the film were 1.8 (1%), 24 (25%), and 60 ns (74%), and the scintillation decay times were 3.9 (7%) and 43.6 ns (93%). Because of the rapid decay and high light yield, Се-doped (Pb,Gd)3(Al,Ga)5O12 garnet films can be used in X-ray scintillators for different applications, such as homeland security.

Published in Journal of Science: Advanced Materials and Devices

ISSN: 2468-2284 (Print); 2468-2179 (Online)
Publisher: Elsevier
Country of publisher: Netherlands
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
Website: https://www.journals.elsevier.com/journal-of-science-advanced-materials-and-devices

About the journal