NUMERICAL SIMULATION OF THE INFLUENCE OF RADIATION ON THE MOS DEVICES PARAMETERS

Abstract

A model describing the space-time evolution of the charge which arises in the dielectric struc-ture of metal-insulator-semiconductor under ionizing radiation of X-ray and gamma-rays is consi-dered. The system of equations is solved by the numerical method. For realization of the difference problem an iterative algorithm is developed. The results of numerical modeling are presented.