SnS Quantum Dots Enhancing Carbon-Based Hole Transport Layer-Free Visible Photodetectors

Abstract

The recombination of charges and thermal excitation of carriers at the interface between methylammonium lead iodide perovskite (PVK) and the carbon electrode are crucial factors that affect the optoelectronic performance of carbon-based hole transport layer (HTL)-free perovskite photodetectors. In this work, a method was employed to introduce SnS quantum dots (QDs) on the back surface of perovskite, which passivated the defect states on the back surface of perovskite and addressed the energy-level mismatch issue between perovskite and carbon electrode. Performance testing of the QDs and the photodetector revealed that SnS QDs possess energy-level structures that are well matched with perovskite and have high absorption coefficients. The incorporation of these QDs into the interface layer effectively suppresses the dark current of the photodetector and greatly enhances the utilization of incident light. The experimental results demonstrate that the introduction of SnS QDs reduces the dark current by an order of magnitude compared to the pristine device at 0 V bias and increases the responsivity by 10%. The optimized photodetector exhibits a wide spectral response range (350 nm to 750 nm), high responsivity (0.32 A/W at 500 nm), and high specific detectivity (>1 × 1012 Jones).

Keywords

• SnS quantum dots
• perovskite
• photodetector
• interface modification
• heterojunction