Tekhnologiya i Konstruirovanie v Elektronnoi Apparature (Oct 2008)
The influence of initial defects on mechanical stress and deformation distribution in oxidized silicon
Abstract
The near-surface silicon layers in silicon – dioxide silicon systems with modern methods of research are investigated. It is shown that these layers have compound structure and their parameters depend on oxidation and initial silicon parameters. It is shown the influence of initial defects on mechanical stress and deformation distribution in oxidized silicon.