MONOLITHIC INTEGRATED CIRCUIT OF GаN LOW-NOISE AMPLIFIER FOR 57-64 GHz BANDWIDTH

Abstract

The article describes the development of a low-noise amplifier for the 57-64 GHz band based on a wide-gap semiconductor - gallium nitride. We analyze existing commercial developments in the area of low-noise amplifiers for the 60 GHz band, which are based mainly on gallium arsenide. At the initial stage we developed test HEMT-transistors on the basis of which we created the transistor models - Fujii model and Pospieszalski model. On the basis of the developed models we designed an amplifier schematic circuit consisting of 4 cascades. Based on the schematic circuit, we designed a topology of a monolithic integrated circuit in the ADS CAD, and made a complete electrodynamic calculation of the topology, which showed reachability of the required characteristics in the frequency range 57-64 GHz. Conducted measurements of a manufactured sample showed the fulfillment requirements of the range and a good agreement with the calculations. One of the features of the technology of the developed amplifier is the step of forming of electrical connections - through holes, which provide a common grounding plane of the circuit.

Keywords

• hemt-транзистор
• monolithic integrated circuit
• millimeter wave
• low-noise amplifier
• hemt
• noise figure
• algan/gan heterostructure