Gallium arsenide p+–n–p+-structures with impoverished base area

Abstract

It is displayed experimentally, that the current transport’s mechanism through p+GaAs–nGaAs–p+GaAs-structure is formed by injection-tunnel and generation-recombination mechanisms. Injection-tunnel current prevails at modulation of base’s part which contains defects, and generation-recombination currents are determinative at modulation of base’s part with lesser defectiveness. p+GaAs–nGaAs–p+GaAs-structures are of interest for creating voltage suppressors and electronic switches on their base.

Keywords

• charge transport mechanism
• p+GaAs–nGaAs–p+GaAs structure
• modulation
• defects
• voltage limiter