Passively Q-Switched Er:LuAG Laser at 1.65 μm Using MoS2 and WS2 Saturable Absorbers

Shuaiyi Zhang; Lei Guo; Mingqi Fan; Fei Lou; Peng Gao; Hao Lv; Xia Wang; Jianlong Yang; Tao Li; Kejian Yang; Shengzhi Zhao

doi:10.1109/JPHOT.2017.2691740

IEEE Photonics Journal (Jan 2017)

Passively Q-Switched Er:LuAG Laser at 1.65 μm Using MoS2 and WS2 Saturable Absorbers

Shuaiyi Zhang,
Lei Guo,
Mingqi Fan,
Fei Lou,
Peng Gao,
Hao Lv,
Xia Wang,
Jianlong Yang,
Tao Li,
Kejian Yang,
Shengzhi Zhao

Affiliations

Shuaiyi Zhang: Shandong Advanced Optoelectronic Materials and Technologies Engineering Laboratory of Qingdao, School of Mathematics and Physics, Qingdao University of Science and Technology, Qingdao, China
Lei Guo: School of Information Science and Engineering, and Shandong Provincial Key Laboratory of Laser Technology and Application, Shandong University, Jinan, China
Mingqi Fan: School of Information Science and Engineering, and Shandong Provincial Key Laboratory of Laser Technology and Application, Shandong University, Jinan, China
Fei Lou: Shandong Advanced Optoelectronic Materials and Technologies Engineering Laboratory of Qingdao, School of Mathematics and Physics, Qingdao University of Science and Technology, Qingdao, China
Peng Gao: Shandong Advanced Optoelectronic Materials and Technologies Engineering Laboratory of Qingdao, School of Mathematics and Physics, Qingdao University of Science and Technology, Qingdao, China
Hao Lv: Shandong Advanced Optoelectronic Materials and Technologies Engineering Laboratory of Qingdao, School of Mathematics and Physics, Qingdao University of Science and Technology, Qingdao, China
Xia Wang: Shandong Advanced Optoelectronic Materials and Technologies Engineering Laboratory of Qingdao, School of Mathematics and Physics, Qingdao University of Science and Technology, Qingdao, China
Jianlong Yang: SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, China
Tao Li: School of Information Science and Engineering, and Shandong Provincial Key Laboratory of Laser Technology and Application, Shandong University, Jinan, China
Kejian Yang: School of Information Science and Engineering, and Shandong Provincial Key Laboratory of Laser Technology and Application, Shandong University, Jinan, China
Shengzhi Zhao: School of Information Science and Engineering, and Shandong Provincial Key Laboratory of Laser Technology and Application, Shandong University, Jinan, China

DOI: https://doi.org/10.1109/JPHOT.2017.2691740
Journal volume & issue: Vol. 9, no. 3
pp. 1 – 7

Abstract

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We describe passively Q-switched Er:LuAG laser characteristics at 1.65 μm for the first time, with MoS2 and WS2 as the saturable absorber, respectively. The saturable absorbers were both prepared with the liquid phase exfoliation method. A shortest pulse width of 1.1 μ s was attained with the pulse repetition frequency of 41.6 kHz for the MoS2 saturable absorber, resulting in the highest peak power of 4.33 W. For the WS2 saturable absorber, a minimum pulse of 1.6 μs was gained with the pulse repetition frequency of 34.2 kHz and the calculated peak power of 4.13 W.

Published in IEEE Photonics Journal

ISSN: 1943-0655 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Engineering (General). Civil engineering (General): Applied optics. Photonics; Science: Physics: Optics. Light
Website: http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=4563994

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