Study on the damage evolution of 6H-SiC under different phosphorus ion implantation conditions and annealing temperatures

Abstract

In this work, we investigate the radiation damage of 6H-SiC crystals by phosphorus (P) ion implantation. The 6H-SiC samples were implanted at different energy with the same fluence of 5.0 × 1014 ions/cm2 at room temperature, one of which was subsequently annealed. Raman and absorption spectra were obtained to probe the structure and optical properties of 6H-SiC crystals after P ion implantation. In addition, Rutherford backscattering/channeling spectroscopy and transmission electron microscopy were used to explore further the damage behavior at different implantation energy and damage evolution with post-annealing treatment. It was found that the damage of the 200 keV implanted sample partially recovered after annealing at 600 °C for 60 min and disappeared at an annealing temperature of 800 °C. The damage evolution behavior of phosphorus ions implantation into 6H-SiC crystals with different implantation and annealing conditions is presented in our work.