Nature Communications (Sep 2020)
Intermediate-phase-assisted low-temperature formation of γ-CsPbI3 films for high-efficiency deep-red light-emitting devices
- Chang Yi,
- Chao Liu,
- Kaichuan Wen,
- Xiao-Ke Liu,
- Hao Zhang,
- Yong Yu,
- Ning Fan,
- Fuxiang Ji,
- Chaoyang Kuang,
- Bo Ma,
- Cailing Tu,
- Ya Zhang,
- Chen Xue,
- Renzhi Li,
- Feng Gao,
- Wei Huang,
- Jianpu Wang
Affiliations
- Chang Yi
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech)
- Chao Liu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech)
- Kaichuan Wen
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech)
- Xiao-Ke Liu
- Department of Physics, Chemistry, and Biology (IFM), Linköping University
- Hao Zhang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech)
- Yong Yu
- Department of Physics, Chemistry, and Biology (IFM), Linköping University
- Ning Fan
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech)
- Fuxiang Ji
- Department of Physics, Chemistry, and Biology (IFM), Linköping University
- Chaoyang Kuang
- Department of Physics, Chemistry, and Biology (IFM), Linköping University
- Bo Ma
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech)
- Cailing Tu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech)
- Ya Zhang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech)
- Chen Xue
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE), Xi’an Institute of Biomedical Materials & Engineering (IBME), Northwestern Polytechnical University (NPU)
- Renzhi Li
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech)
- Feng Gao
- Department of Physics, Chemistry, and Biology (IFM), Linköping University
- Wei Huang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech)
- Jianpu Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech)
- DOI
- https://doi.org/10.1038/s41467-020-18380-1
- Journal volume & issue
-
Vol. 11,
no. 1
pp. 1 – 8
Abstract
Exploiting low-temperature formed black phase CsPbI3 for light-emitting applications remains a challenge. Here, the authors propose a method to enable the deposition of γ-CsPbI3 films at 100C and demonstrate a light-emitting diode with an external quantum efficiency of 10.4% with suppressed efficiency roll-off.
