Fully Vacuum-Sealed Diode-Structure Addressable ZnO Nanowire Cold Cathode Flat-Panel X-ray Source: Fabrication and Imaging Application

Chengyun Wang; Guofu Zhang; Yuan Xu; Yicong Chen; Shaozhi Deng; Jun Chen

doi:10.3390/nano11113115

Nanomaterials (Nov 2021)

Fully Vacuum-Sealed Diode-Structure Addressable ZnO Nanowire Cold Cathode Flat-Panel X-ray Source: Fabrication and Imaging Application

Chengyun Wang,
Guofu Zhang,
Yuan Xu,
Yicong Chen,
Shaozhi Deng,
Jun Chen

Affiliations

Chengyun Wang: State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China
Guofu Zhang: State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China
Yuan Xu: School of Biomedical Engineering, Southern Medical University, Guangzhou 510515, China
Yicong Chen: State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China
Shaozhi Deng: State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China
Jun Chen: State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China

DOI: https://doi.org/10.3390/nano11113115
Journal volume & issue: Vol. 11, no. 11
p. 3115

Abstract

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A fully vacuum-sealed addressable flat-panel X-ray source based on ZnO nanowire field emitter arrays (FEAs) was fabricated. The device has a diode structure composed of cathode panel and anode panel. ZnO nanowire cold cathodes were prepared on strip electrodes on a cathode panel and Mo thin film strips were prepared on an anode panel acting as the target. Localized X-ray emission was realized by cross-addressing of cathode and anode electrodes. A radiation dose rate of 10.8 μGy/s was recorded at the anode voltage of 32 kV. The X-ray imaging of objects using different addressing scheme was obtained and the imaging results were analyzed. The results demonstrated the feasibility of achieving addressable flat-panel X-ray source using diode-structure for advanced X-ray imaging.

Published in Nanomaterials

ISSN: 2079-4991 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Science: Chemistry
Website: https://www.mdpi.com/journal/nanomaterials

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