Phosphorus diffusion with the help of the solid planar source in the manufacturing of the integrated circuits

Abstract

The results of the development and realization of the basic process of the phosphorus diffusion for the formation of the active region of the power silicon transistor have been considered. It is shown that the obtained optimum technological conditions of the phosphorus diffusion using solid planar source allow to get the transistors with improved electrophysical parameters.

Keywords

• phosphorus diffusion
• active region
• technological process
• transistor
• solid planar source
• electrophysical parameters