Review on the Progress of AlGaN-based Ultraviolet Light-Emitting Diodes

Yuxuan Chen; Jianwei Ben; Fujun Xu; Jinchai Li; Yang Chen; Xiaojuan Sun; Dabing Li

Fundamental Research (Nov 2021)

Review on the Progress of AlGaN-based Ultraviolet Light-Emitting Diodes

Yuxuan Chen,
Jianwei Ben,
Fujun Xu,
Jinchai Li,
Yang Chen,
Xiaojuan Sun,
Dabing Li

Affiliations

Yuxuan Chen: State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Jianwei Ben: State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Fujun Xu: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
Jinchai Li: Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, College of Physical Science and Technology, Xiamen University, Xiamen 361005, China
Yang Chen: State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Xiaojuan Sun: State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Dabing Li: State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China; Corresponding author.

Journal volume & issue: Vol. 1, no. 6
pp. 717 – 734

Abstract

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AlGaN-based materials have exhibited considerable potential for fabricating ultraviolet (UV) light-emitting diodes (LEDs) owing to their direct, wide, and adjustable energy bandgap. AlGaN-based devices have extensive applicability owing to their stable physico-chemical properties. With decades of research effort, significant progress has been achieved in enhancing the working efficiency of AlGaN-based LEDs by optimizing the crystalline quality, doping efficiency, and device design. In this review, methods to obtain high-quality AlGaN-based materials, achieve high doping efficiency, and design UV-LED structures are summarized and discussed. Finally, the issues that need to be addressed in AlGaN-based UV-LED devices are highlighted.

Published in Fundamental Research

ISSN: 2667-3258 (Online)
Publisher: KeAi Communications Co. Ltd.
Country of publisher: China
LCC subjects: Science: Science (General)
Website: https://www.keaipublishing.com/en/journals/fundamental-research/

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