Fully transparent field-effect transistor with high drain current and on-off ratio

Jisung Park; Hanjong Paik; Kazuki Nomoto; Kiyoung Lee; Bo-Eun Park; Benjamin Grisafe; Li-Chen Wang; Sayeef Salahuddin; Suman Datta; Yongsung Kim; Debdeep Jena; Huili Grace Xing; Darrell G. Schlom

doi:10.1063/1.5133745

APL Materials (Jan 2020)

Fully transparent field-effect transistor with high drain current and on-off ratio

Jisung Park,
Hanjong Paik,
Kazuki Nomoto,
Kiyoung Lee,
Bo-Eun Park,
Benjamin Grisafe,
Li-Chen Wang,
Sayeef Salahuddin,
Suman Datta,
Yongsung Kim,
Debdeep Jena,
Huili Grace Xing,
Darrell G. Schlom

Affiliations

Jisung Park: Department of Material Science and Engineering, Cornell University, Ithaca, New York 14853, USA
Hanjong Paik: Department of Material Science and Engineering, Cornell University, Ithaca, New York 14853, USA
Kazuki Nomoto: School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA
Kiyoung Lee: Nano Electronics Laboratory, Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 16678, South Korea
Bo-Eun Park: Nano Electronics Laboratory, Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 16678, South Korea
Benjamin Grisafe: Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA
Li-Chen Wang: Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA
Sayeef Salahuddin: Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA
Suman Datta: Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA
Yongsung Kim: Nano Electronics Laboratory, Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 16678, South Korea
Debdeep Jena: Department of Material Science and Engineering, Cornell University, Ithaca, New York 14853, USA
Huili Grace Xing: Department of Material Science and Engineering, Cornell University, Ithaca, New York 14853, USA
Darrell G. Schlom: Department of Material Science and Engineering, Cornell University, Ithaca, New York 14853, USA

DOI: https://doi.org/10.1063/1.5133745
Journal volume & issue: Vol. 8, no. 1
pp. 011110 – 011110-6

Abstract

Read online

We report a fully transparent thin-film transistor utilizing a La-doped BaSnO3 channel layer that provides a drain current of 0.468 mA/μm and an on-off ratio of 1.5 × 108. The La-doped BaSnO3 channel is grown on a 100–150 nm thick unintentionally doped BaSnO3 buffer layer on a (001) MgO substrate by molecular-beam epitaxy. Unpatterned channel layers show mobilities of 127–184 cm2 V−1 s−1 at carrier concentrations in the low to mid 1019 cm−3 range. The BaSnO3 is patterned by reactive ion etching under conditions preserving the high mobility and conductivity. Using this patterning method, a sub-micron-scale thin film transistor exhibiting complete depletion at room temperature is achieved.

Published in APL Materials

ISSN: 2166-532X (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Technology: Chemical technology: Biotechnology; Science: Physics
Website: http://aplmaterials.aip.org

About the journal