Nature Communications (Jul 2022)
Nonvolatile ferroelectric domain wall memory integrated on silicon
- Haoying Sun,
- Jierong Wang,
- Yushu Wang,
- Changqing Guo,
- Jiahui Gu,
- Wei Mao,
- Jiangfeng Yang,
- Yuwei Liu,
- Tingting Zhang,
- Tianyi Gao,
- Hanyu Fu,
- Tingjun Zhang,
- Yufeng Hao,
- Zhengbin Gu,
- Peng Wang,
- Houbing Huang,
- Yuefeng Nie
Affiliations
- Haoying Sun
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University
- Jierong Wang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University
- Yushu Wang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University
- Changqing Guo
- Department of Physics, University of Warwick
- Jiahui Gu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University
- Wei Mao
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University
- Jiangfeng Yang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University
- Yuwei Liu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University
- Tingting Zhang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University
- Tianyi Gao
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University
- Hanyu Fu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University
- Tingjun Zhang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University
- Yufeng Hao
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University
- Zhengbin Gu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University
- Peng Wang
- Department of Physics, University of Warwick
- Houbing Huang
- School of Materials Science and Engineering & Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology
- Yuefeng Nie
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University
- DOI
- https://doi.org/10.1038/s41467-022-31763-w
- Journal volume & issue
-
Vol. 13,
no. 1
pp. 1 – 9
Abstract
Integrating ferroelectric perovskite oxides on Si is highly desired for electronic applications but challenging. Here, the authors show emergent in-plane ferroelectricity and promising nonvolatile memories based on resistive domain wall in BaTiO3/Si.
