Influence of Y Doping on WO₃ Membranes Applied in Electrolyte-Insulator-Semiconductor Structures

Abstract

In this paper, tungsten oxide (WO3) is deposited on a silicon substrate applied in electrolyte-insulator-semiconductor structures for pH sensing devices. To boost the sensing performance, yttrium (Y) is doped into WO3 membranes, and annealing is incorporated in the fabrication process. To investigate the effects of Y doping and annealing, multiple material characterizations including X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atom force microscopy (AFM), scanning electron microscopy (SEM), and transmission electron microscopy (TEM) are performed. Material analysis results indicate that annealing and Y doping can increase crystallinity, suppress defects, and enhance grainization, thereby strengthening membrane sensing capabilities in terms of sensitivity, linearity, and reliability. Because of their stable response, high reliability, and compact size, Y-doped WO3 membranes are promising for future biomedical applications.

Keywords

• tungsten trioxide
• yttrium doping
• annealing
• electrolyte-insulator-semiconductor
• membranes
• defects