Wafer-scale Ge freestanding membranes for lightweight and flexible optoelectronics

Abstract

Semiconductor-based freestanding membranes (FSM) have recently emerged as a highly promising area of advanced materials research. Their unique properties, such as lightweight and flexibility, make them attractive for a wide range of disruptive device applications. However, the production of high-quality, single-crystalline FSM, especially from elemental materials such as germanium (Ge), remains a significant challenge. In this work, we report on the formation of easily detachable wafer-scale Ge FSM on porous Ge (PGe) substrate. The proposed method relies on low-temperature Ge epitaxy, allowing to preserve the porous structure's integrity during the FSM formation, and an easy substrate preparation for multiple reuses. Analysis of the surface morphology as a function of the deposited Ge thickness reveals that the FSM formation occurs in two distinct regimes. During the initial epitaxial regime, the Ge growth is governed by 3D nucleation on the PGe top surface. The nanoscale islands size increase, and consequent coalescence are found to increase the surface roughness up to a critical thickness, allowing full coalescence of islands into a 2D epilayer. The analysis of the membrane's surface morphology for various thicknesses shows continuous improvement, achieving sub nanometer surface roughness. Moreover, we demonstrate that the FSM formation process is applicable regardless the PGe porosity and thickness, while offering facile and sustainable substrate reconditioning for multiple FSM generation from the same substrate. Our findings open new opportunities to produce lightweight and flexible, high-performance optoelectronics based on Ge FSM, while ensuring reduction of both cost and critical materials consumption.

Keywords

• Germanium
• Porous substrate
• Freestanding membranes
• Epitaxial growth
• Layer transfer
• Substrate re-use