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Open Physics
(Sep 2006)
Ge diffusion on Si surfaces
Dolbak Andrey,
Olshanetsky Boris
Affiliations
Dolbak Andrey
Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, Novosibirsk, 630090, Russian Federation
Olshanetsky Boris
Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, Novosibirsk, 630090, Russian Federation
DOI
https://doi.org/10.2478/s11534-006-0015-0
Journal volume & issue
Vol. 4, no. 3
pp. 310 – 317
Abstract
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No abstracts available.
Keywords
surface
silicon
germanium
surface structure
surface diffusion
low energy electron diffraction
auger electron spectroscopy
68.47.fg
68.35.fx
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