Electromagnetic influences and pulsing hardness of integrated circuits

Abstract

The results of the single pulsing electrical overstress (EOS) series with energy below the threshold of failure for modern submicron IC’s design are presented. The study was conducted on two types of modern sub-micron VLSI. The obtained results confirm the possibility of accumulation of the effects of damage from repeated exposure EOS in modern IC’s and allow you to get the dependence describing the additive nature of damage the IC’s during exposure to subthreshold EOS. The obtained dependence agrees well with the Arrhenius equation, which indicates the thermal nature of the damage when exposed to a series of subthreshold EOS.The method of the IC’s testing is proposed to determine the level of the IC’s EOS hardness to the effects of multiple different pulsing voltages.

Keywords

• electrical overstress
• subthreshold effects
• the integrated circuit