Spin injection, relaxation, and manipulation in GaN-based semiconductors

Abstract

ABSTRACTGaN-based semiconductors are deemed to be a potential candidate for developing spintronic devices owing to the artificially controllable spin-orbit coupling and the high Curie temperature of GaN-based diluted magnetic semiconductors. Spin injection, spin relaxation dynamics, and spin manipulation are the key issues in the development of GaN-based spintronic devices, which have been reviewed in this article. In the end, a brief section presents the research progress of GaN-based spintronic devices.

Keywords

• GaN
• spin-orbit coupling
• spin injection
• spin relaxation
• spin manipulation