AlGaN Quantum Disk Nanorods with Efficient UV-B Emission Grown on Si(111) Using Molecular Beam Epitaxy

Dongqi Zhang; Tao Tao; Haiding Sun; Siqi Li; Hongfeng Jia; Huabin Yu; Pengfei Shao; Zhenhua Li; Yaozheng Wu; Zili Xie; Ke Wang; Shibing Long; Bin Liu; Rong Zhang; Youdou Zheng

doi:10.3390/nano12142508

Nanomaterials (Jul 2022)

AlGaN Quantum Disk Nanorods with Efficient UV-B Emission Grown on Si(111) Using Molecular Beam Epitaxy

Dongqi Zhang,
Tao Tao,
Haiding Sun,
Siqi Li,
Hongfeng Jia,
Huabin Yu,
Pengfei Shao,
Zhenhua Li,
Yaozheng Wu,
Zili Xie,
Ke Wang,
Shibing Long,
Bin Liu,
Rong Zhang,
Youdou Zheng

Affiliations

Dongqi Zhang: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
Tao Tao: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
Haiding Sun: School of Microelectronics, University of Science and Technology of China, Hefei 230026, China
Siqi Li: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
Hongfeng Jia: School of Microelectronics, University of Science and Technology of China, Hefei 230026, China
Huabin Yu: School of Microelectronics, University of Science and Technology of China, Hefei 230026, China
Pengfei Shao: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
Zhenhua Li: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
Yaozheng Wu: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
Zili Xie: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
Ke Wang: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
Shibing Long: School of Microelectronics, University of Science and Technology of China, Hefei 230026, China
Bin Liu: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
Rong Zhang: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
Youdou Zheng: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China

DOI: https://doi.org/10.3390/nano12142508
Journal volume & issue: Vol. 12, no. 14
p. 2508

Abstract

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AlGaN nanorods have attracted increasing amounts of attention for use in ultraviolet (UV) optoelectronic devices. Here, self-assembled AlGaN nanorods with embedding quantum disks (Qdisks) were grown on Si(111) using plasma-assisted molecular beam epitaxy (PA-MBE). The morphology and quantum construction of the nanorods were investigated and well-oriented and nearly defect-free nanorods were shown to have a high density of about 2 × 1010 cm−2. By controlling the substrate temperature and Al/Ga ratio, the emission wavelengths of the nanorods could be adjusted from 276 nm to 330 nm. By optimizing the structures and growth parameters of the Qdisks, a high internal quantum efficiency (IQE) of the AlGaN Qdisk nanorods of up to 77% was obtained at 305 nm, which also exhibited a shift in the small emission wavelength peak with respect to the increasing temperatures during the PL measurements.

Published in Nanomaterials

ISSN: 2079-4991 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Science: Chemistry
Website: https://www.mdpi.com/journal/nanomaterials

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