Quantum Hall device data monitoring following encapsulating polymer deposition

Albert F. Rigosi; Chieh-I Liu; Bi Yi Wu; Hsin-Yen Lee; Mattias Kruskopf; Yanfei Yang; Heather M. Hill; Jiuning Hu; Emily G. Bittle; Jan Obrzut; Angela R. Hight Walker; Randolph E. Elmquist; David B. Newell

Data in Brief (Oct 2018)

Quantum Hall device data monitoring following encapsulating polymer deposition

Albert F. Rigosi,
Chieh-I Liu,
Bi Yi Wu,
Hsin-Yen Lee,
Mattias Kruskopf,
Yanfei Yang,
Heather M. Hill,
Jiuning Hu,
Emily G. Bittle,
Jan Obrzut,
Angela R. Hight Walker,
Randolph E. Elmquist,
David B. Newell

Affiliations

Albert F. Rigosi: National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States; Corresponding author.
Chieh-I Liu: National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States; Graduate Institute of Applied Physics, National Taiwan University, Taipei 10617, Taiwan
Bi Yi Wu: National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States; Graduate Institute of Applied Physics, National Taiwan University, Taipei 10617, Taiwan
Hsin-Yen Lee: National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States; Theiss Research, La Jolla, CA 92037, United States
Mattias Kruskopf: National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States; Joint Quantum Institute, University of Maryland, College Park, MD 20742, United States
Yanfei Yang: National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States; Joint Quantum Institute, University of Maryland, College Park, MD 20742, United States
Heather M. Hill: National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States
Jiuning Hu: National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States
Emily G. Bittle: National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States
Jan Obrzut: National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States
Angela R. Hight Walker: National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States
Randolph E. Elmquist: National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States
David B. Newell: National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States

Journal volume & issue: Vol. 20
pp. 1201 – 1208

Abstract

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The information provided in this data article will cover the growth parameters for monolayer, epitaxial graphene, as well as how to verify the layer homogeneity by confocal laser scanning and optical microscopy. The characterization of the subsequently fabricated quantum Hall device is shown for example cases during a series of environmental exposures. Quantum Hall data acquired from a CYTOP encapsulation is also provided. Data from Raman spectroscopy, atomic force microscopy, and other electrical property trends are shown. Lastly, quantum Hall effect data are presented from devices with deposited Parylene C films measuring 10.7 μm and 720 nm. All data are relevant for Rigosi et al. [1].

Published in Data in Brief

ISSN: 2352-3409 (Online)
Publisher: Elsevier
Country of publisher: United States
LCC subjects: Medicine: Medicine (General): Computer applications to medicine. Medical informatics; Science: Science (General)
Website: http://www.journals.elsevier.com/data-in-brief/

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