npj Spintronics (Oct 2024)

Recent progress in spin-orbit torque magnetic random-access memory

  • V. D. Nguyen,
  • S. Rao,
  • K. Wostyn,
  • S. Couet

DOI
https://doi.org/10.1038/s44306-024-00044-1
Journal volume & issue
Vol. 2, no. 1
pp. 1 – 15

Abstract

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Abstract Spin-orbit torque magnetic random-access memory (SOT-MRAM) offers promise for fast operation and high endurance but faces challenges such as low switching current, reliable field free switching, and back-end of line manufacturing processes. We review recent advancements in perpendicular SOT-MRAM devices, emphasizing on material developments to enhance charge-spin conversion efficiency and large-scale device integration strategies. We also discuss the remaining challenges in achieving a single device with low switching current, reliable field free switching to unlock the full potential of SOT-MRAM technology.