Nature Communications (Apr 2018)

Interplay of orbital effects and nanoscale strain in topological crystalline insulators

  • Daniel Walkup,
  • Badih A. Assaf,
  • Kane L. Scipioni,
  • R. Sankar,
  • Fangcheng Chou,
  • Guoqing Chang,
  • Hsin Lin,
  • Ilija Zeljkovic,
  • Vidya Madhavan

DOI
https://doi.org/10.1038/s41467-018-03887-5
Journal volume & issue
Vol. 9, no. 1
pp. 1 – 6

Abstract

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The role of orbital degrees of freedom in determining the electronic structure remains obscured. Here, Walkup et al. report strain-induced band structure changes in a topological crystalline insulator SnTe, whose surprising behavior reflects the orbital nature of bands.