Performance Analysis of Resonant-Fin Transistors and Their Application in RF-Circuit Design

Abstract

Emerging new communication standards like 5G or 6G aggravate the circuit design of radio-frequency generation systems as they constantly increase demand on high bandwidths, low latency, and high spectral purity. The utilization of high- $Q $ oscillators, however, provides a possibility of optimisation of radio-frequency oscillators regarding their phase-noise performance in the overall system. This paper analyses one of the most promising electromechanical resonator devices, the resonant fin transistor with respect to its performance and application in oscillator circuit design. Several investigations regarding its working principle, design trade-offs and limits are carried out in this work. An oscillator circuit design is given for two variants of the resonant fin transistor device together with an outlook on its performance compared to other state-of-the-art radio-frequency oscillator designs. Following the performance analyses conducted throughout this work, the fundamental limit for the $Q$ -factor of this resonator is investigated, challenging the validity of functionality of the resonant fin transistor and its potential for circuit applications.

Keywords

• Circuit simulation
• finite element analysis
• FinFET
• oscillator
• resonator
• highQ-factor