Photoluminescence under high-electric field of PbS quantum dots

B. Ullrich; J. S. Wang; G. J. Brown

doi:10.1063/1.4766329

AIP Advances (Dec 2012)

Photoluminescence under high-electric field of PbS quantum dots

B. Ullrich,
J. S. Wang,
G. J. Brown

Affiliations

B. Ullrich: Instituto de Ciencias Físicas, Universidad Nacional Autónoma de México, Cuernavaca, Morelos C.P. 62210, México
J. S. Wang: Air Force Research Laboratory, Materials & Manufacturing Directorate, Wright Patterson AFB, Ohio 45433-7707, USA
G. J. Brown: Air Force Research Laboratory, Materials & Manufacturing Directorate, Wright Patterson AFB, Ohio 45433-7707, USA

DOI: https://doi.org/10.1063/1.4766329
Journal volume & issue: Vol. 2, no. 4
pp. 042132 – 042132-5

Abstract

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The effect of a laterally applied electric field (≤10 kV/cm) on the photoluminescence of colloidal PbS quantum dots (diameter of 2.7 nm) on glass was studied. The field provoked a blueshift of the emission peak, a reduction of the luminescent intensity, and caused an increase in the full width at half maximum of the emission spectrum. Upon comparison with the photoluminescence of p-type GaAs exhibits the uniqueness of quantum dot based electric emission control with respect to bulk materials.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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