Scientific Reports (Apr 2021)

Drastic improvement of Curie temperature by chemical pressure in N-type diluted magnetic semiconductor Ba(Zn,Co) $$_{2}$$ 2 As $$_{2}$$ 2

  • Licheng Fu,
  • Yilun Gu,
  • Guoxiang Zhi,
  • Haojie Zhang,
  • Rufei Zhang,
  • Jinou Dong,
  • Xueqin Zhao,
  • Lingfeng Xie,
  • Fanlong Ning

DOI
https://doi.org/10.1038/s41598-021-86205-2
Journal volume & issue
Vol. 11, no. 1
pp. 1 – 7

Abstract

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Abstract We report the effect of chemical pressure on the ferromagnetic ordering of the recently reported n-type diluted magnetic semiconductor Ba(Zn $$_{1-x}$$ 1 - x Co $$_{x}$$ x ) $$_{2}$$ 2 As $$_{2}$$ 2 which has a maximum $$T_C$$ T C $$\sim$$ ∼ 45 K. Doping Sb into As-site and Sr into Ba-site induces negative and positive chemical pressure, respectively. While conserving the tetragonal crystal structure and n-type carriers, the unit cell volume shrink by $$\sim$$ ∼ 0.3 $$\%$$ % with 15 $$\%$$ % Sr doping, but drastically increase the ferromagnetic transition temperature by 18 $$\%$$ % to 53 K. Our experiment unequivocally demonstrate that the parameters of Zn(Co)As $$_{4}$$ 4 tetrahedra play a vital role in the formation of ferromagnetic ordering in the Ba(Zn,Co) $$_{2}$$ 2 As $$_{2}$$ 2 DMS.