Effect of Pd-P Layer on the Bonding Strength of Bi-Te Thermoelectric Elements

Abstract

In this study, the effect of electroless Pd-P plating on the bonding strength of the Bi-Te thermoelectric elements was investigated. The bonding strength was approximately doubled by electroless Pd-P plating. Brittle Sn-Te intermetallic compounds were formed on the bonding interface of the thermoelectric elements without electroless Pd-P plating, and the fracture of the bond originated from these intermetallic compounds. A Pd-Sn solder reaction layer with a thickness of approximately 20 µm was formed under the Pd-P plating layer in the case of the electroless Pd-P plating, and prevented the diffusion of Bi and Te. In addition, the fracture did not occur on the bonding interface but in the thermoelectric elements for the electroless Pd-P plating because the bonding strength of the Pd-Sn reaction layer was higher than the shear strength of the thermoelectric elements.

Keywords

• bismuth-telluride
• thermoelectric module
• electroless pd-p plating
• bonding strength