Preparation and relevant properties of amorphous AlBN dielectric films

Abstract

Amorphous AlBN dielectric films were deposited on GaN (002) by pulsed laser deposition (PLD). The crystal structure and composition of the grown films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). Conductive atomic force microscope (CAFM) and I-V methods were also used to test the electrical properties of films with different thickness. The results show that the AlBN dielectric films with different thickness is amorphous, and the content of boron in all the films is about 6.7%(atom fraction). The root-mean-aquare (RMS) surface roughness Rq of the films with thickness of 3 nm and 18 nm are only 0.209 nm and 0.116 nm, respectively, indicating smooth surface of these AlBN film. When the voltage of ±10 V is applied, there is no obvious leakage current in the film with a thicknes of 18 nm. However, in the metal-insulator-metal (MIM) structure, a large leakage current appears in the 18 nm thin film structure, and the leakage current density is about -2×10-4 A/cm2 at -2 V.

Keywords

• albn
• pulsed laser deposition
• amorphous film