Sensors (Aug 2018)

A 12-Gb/s Stacked Dual-Channel Interface for CMOS Image Sensor Systems

  • Sang-Hoon Kim,
  • Hoon Shin,
  • Youngkyun Jeong,
  • June-Hee Lee,
  • Jaehyuk Choi,
  • Jung-Hoon Chun

DOI
https://doi.org/10.3390/s18082709
Journal volume & issue
Vol. 18, no. 8
p. 2709

Abstract

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We propose a dual-channel interface architecture that allocates high and low transition-density bit streams to two separate channels. The transmitter utilizes the stacked drivers with charge-recycling to reduce the power consumption. The direct current (DC)-coupled receiver front-end circuits manage the common-mode level variations and compensate for the channel loss. The tracked oversampling clock and data recovery (CDR), which realizes fast lock acquisition below 1 baud period and low logic latency, is shared by the two channels. Fabricated in a 65-nm low-power complementary metal-oxide semiconductor (CMOS) technology, the dual-channel transceiver achieves 12-Gb/s data rate while the transmitter consumes 20.43 mW from a 1.2-V power supply.

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