InTlSb quantum dot structures

Abstract

In this work, total (linear and nonlinear) optical absorption from InTl1−xSbx QD structures was studied. It is shown that these Tl-based QD structures have high absorption at long wavelengths. Nonlinear absorption at high power levels was preferred at some slow-light applications. The structures studied assess the possibility of infrared applications of Tl-based structures. Keywords: Quantum dot devices, Semiconductors, Linear absorption