Electron-donating amine-interlayer induced n-type doping of polymer:nonfullerene blends for efficient narrowband near-infrared photo-detection

Abstract

Fabrication of efficient narrowband near-infrared photodetectors remains a challenge. Here, Liu et al. show a facile and general approach for achieving a sub-50 nm response by intentionally n-doping an optically-thick nonfullerene photodiode using an electron-donating amine-interlayer.