On-wafer wideband characterization: a powerful tool for improving the IC technologies

Abstract

In the present paper, the interest of wideband characterization for the development of integrated technologies is highlighted through several advanced devices, such as 120 nm partially depleted (PD) silicon-on-insulator (SOI) MOSFETs, 120 nm dynamic threshold (DT) voltage – SOI MOSFETs, 50 nm FinFETs as well as long-channel planar double gate (DG) MOSFETs.

Keywords

• silicon-on-insulator
• MOSFET
• wideband characterization
• microwave frequency
• extraction techniques
• smallsignal equivalent circuit