Ultraviolet emission from low resistance Cu2SnS3/SnO2 and CuInS2/Sn:In2O3 nanowires

E. Karageorgou; M. Zervos; A. Othonos

doi:10.1063/1.4901295

APL Materials (Nov 2014)

Ultraviolet emission from low resistance Cu2SnS3/SnO2 and CuInS2/Sn:In2O3 nanowires

E. Karageorgou,
M. Zervos,
A. Othonos

Affiliations

E. Karageorgou: Nanostructured Materials & Devices Laboratory, School Of Engineering and Department of Mechanical and Manufacturing Engineering, University of Cyprus, P.O. Box 20537, Nicosia 1678, Cyprus
M. Zervos: Nanostructured Materials & Devices Laboratory, School Of Engineering and Department of Mechanical and Manufacturing Engineering, University of Cyprus, P.O. Box 20537, Nicosia 1678, Cyprus
A. Othonos: Research Center of Ultrafast Science, Department of Physics, University of Cyprus, P.O. Box 20537, Nicosia 1678, Cyprus

DOI: https://doi.org/10.1063/1.4901295
Journal volume & issue: Vol. 2, no. 11
pp. 116107 – 116107-7

Abstract

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SnO2 and Sn:In2O3 nanowires were grown on Si(001), and p-n junctions were fabricated in contact with p-type Cu2S which exhibited rectifying current–voltage characteristics. Core-shell Cu2SnS3/SnO2 and CuInS2/Sn:In2O3 nanowires were obtained by depositing copper and post-growth processing under H2S between 100 and 500 °C. These consist mainly of tetragonal rutile SnO2 and cubic bixbyite In2O3. We observe photoluminescence at 3.65 eV corresponding to band edge emission from SnO2 quantum dots in the Cu2SnS3/SnO2 nanowires due to electrostatic confinement. The Cu2SnS3/SnO2 nanowires assemblies had resistances of 100 Ω similar to CuInS2/In2O3 nanowires which exhibited photoluminescence at 3.0 eV.

Published in APL Materials

ISSN: 2166-532X (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Technology: Chemical technology: Biotechnology; Science: Physics
Website: http://aplmaterials.aip.org

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