Moldavian Journal of the Physical Sciences (Oct 2008)

Thin AIN films growth on Si (III) by hydride vapor phase epitaxy

  • Gorceac, Leonid,
  • Davîdov, V.,
  • Jiliaev, Iu.,
  • Botnariuc, Vasile,
  • Raevschi, Simion

Journal volume & issue
Vol. 7, no. 4
pp. 476 – 480

Abstract

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Thin AlN layers have been grown on Si (111) by hydride vapor phase epitaxy (HVPE) method in a horizontal quartz reactor. The surface of layers has been studied by scanning lectron microscopy and by the Raman spectroscopy method and found to have the structured morphology. It has been determined that the layers have high specific electrical resistance and are strained in the plane of the substrate.