Scientific Reports (May 2024)

A CMOS-integrated terahertz near-field sensor based on an ultra-strongly coupled meta-atom

  • Alexander V. Chernyadiev,
  • Dmytro B. But,
  • Yurii Ivonyak,
  • Kęstutis Ikamas,
  • Alvydas Lisauskas

DOI
https://doi.org/10.1038/s41598-024-61971-x
Journal volume & issue
Vol. 14, no. 1
pp. 1 – 10

Abstract

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Abstract Recently, plasmonic-based sensors operating in the terahertz frequency range have emerged as perspective tools for rapid and efficient label-free biosensing applications. In this work, we present a fully electronic approach allowing us to achieve state-of-the-art sensitivity by utilizing a near-field-coupled electronic sensor. We demonstrate that the proposed concept enables the efficient implementation and probing of a so-called ultra-strongly coupled sub-wavelength meta-atom as well as a single resonant circuit, allowing to limit the volume of material under test down to a few picoliter range. The sensor has been monolithically integrated into a cost-efficient silicon-based CMOS technology. Our findings are supported by both numerical and analytical models and validated through experiments. They lay the groundwork for near-future developments, outlining the perspectives for a terahertz microfluidic lab-on-chip dielectric spectroscopy sensor.

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