Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy

Hanjong Paik; Zhen Chen; Edward Lochocki; Ariel Seidner H.; Amit Verma; Nicholas Tanen; Jisung Park; Masaki Uchida; ShunLi Shang; Bi-Cheng Zhou; Mario Brützam; Reinhard Uecker; Zi-Kui Liu; Debdeep Jena; Kyle M. Shen; David A. Muller; Darrell G. Schlom

doi:10.1063/1.5001839

APL Materials (Nov 2017)

Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy

Hanjong Paik,
Zhen Chen,
Edward Lochocki,
Ariel Seidner H.,
Amit Verma,
Nicholas Tanen,
Jisung Park,
Masaki Uchida,
ShunLi Shang,
Bi-Cheng Zhou,
Mario Brützam,
Reinhard Uecker,
Zi-Kui Liu,
Debdeep Jena,
Kyle M. Shen,
David A. Muller,
Darrell G. Schlom

Affiliations

Hanjong Paik: Department of Material Science and Engineering, Cornell University, Ithaca, New York 14853, USA
Zhen Chen: School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA
Edward Lochocki: Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, New York 14853, USA
Ariel Seidner H.: Department of Material Science and Engineering, Cornell University, Ithaca, New York 14853, USA
Amit Verma: Department of Electrical Engineering, IIT Kanpur, Kanpur 208016, India
Nicholas Tanen: Department of Material Science and Engineering, Cornell University, Ithaca, New York 14853, USA
Jisung Park: Department of Material Science and Engineering, Cornell University, Ithaca, New York 14853, USA
Masaki Uchida: Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), University of Tokyo, Tokyo 113-8656, Japan
ShunLi Shang: Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
Bi-Cheng Zhou: Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
Mario Brützam: Leibniz Institute for Crystal Growth, D-12489 Berlin, Germany
Reinhard Uecker: Leibniz Institute for Crystal Growth, D-12489 Berlin, Germany
Zi-Kui Liu: Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
Debdeep Jena: Department of Material Science and Engineering, Cornell University, Ithaca, New York 14853, USA
Kyle M. Shen: Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, New York 14853, USA
David A. Muller: School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA
Darrell G. Schlom: Department of Material Science and Engineering, Cornell University, Ithaca, New York 14853, USA

DOI: https://doi.org/10.1063/1.5001839
Journal volume & issue: Vol. 5, no. 11
pp. 116107 – 116107-11

Abstract

Read online

Epitaxial La-doped BaSnO3 films were grown in an adsorption-controlled regime by molecular-beam epitaxy, where the excess volatile SnOx desorbs from the film surface. A film grown on a (001) DyScO3 substrate exhibited a mobility of 183 cm2 V−1 s−1 at room temperature and 400 cm2 V−1 s−1 at 10 K despite the high concentration (1.2 × 1011 cm−2) of threading dislocations present. In comparison to other reports, we observe a much lower concentration of (BaO)2 Ruddlesden-Popper crystallographic shear faults. This suggests that in addition to threading dislocations, other defects—possibly (BaO)2 crystallographic shear defects or point defects—significantly reduce the electron mobility.

Published in APL Materials

ISSN: 2166-532X (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Technology: Chemical technology: Biotechnology; Science: Physics
Website: http://aplmaterials.aip.org

About the journal