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AIP Advances
(Feb 2020)
Publisher’s Note: “3 GHz RF measurements of AlGaN/GaN transistors transferred from silicon substrates onto single crystalline diamond” [AIP Adv. 9, 125106 (2019)]
Thomas Gerrer,
Heiko Czap,
Thomas Maier,
Fouad Benkhelifa,
Stefan Müller,
Christoph E. Nebel,
Patrick Waltereit,
Rüdiger Quay,
Volker Cimalla
Affiliations
Thomas Gerrer
Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany
Heiko Czap
Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany
Thomas Maier
Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany
Fouad Benkhelifa
Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany
Stefan Müller
Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany
Christoph E. Nebel
Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany
Patrick Waltereit
Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany
Rüdiger Quay
Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany
Volker Cimalla
Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany
DOI
https://doi.org/10.1063/1.5143448
Journal volume & issue
Vol. 10, no. 2
pp. 029902 – 029902-1
Abstract
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