Nature Communications (Nov 2021)
In-plane quasi-single-domain BaTiO3 via interfacial symmetry engineering
- J. W. Lee,
- K. Eom,
- T. R. Paudel,
- B. Wang,
- H. Lu,
- H. X. Huyan,
- S. Lindemann,
- S. Ryu,
- H. Lee,
- T. H. Kim,
- Y. Yuan,
- J. A. Zorn,
- S. Lei,
- W. P. Gao,
- T. Tybell,
- V. Gopalan,
- X. Q. Pan,
- A. Gruverman,
- L. Q. Chen,
- E. Y. Tsymbal,
- C. B. Eom
Affiliations
- J. W. Lee
- Department of Materials Science and Engineering, University of Wisconsin-Madison
- K. Eom
- Department of Materials Science and Engineering, University of Wisconsin-Madison
- T. R. Paudel
- Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska
- B. Wang
- Department of Materials Science and Engineering, The Pennsylvania State University
- H. Lu
- Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska
- H. X. Huyan
- Department of Materials Science and Engineering, University of California
- S. Lindemann
- Department of Materials Science and Engineering, University of Wisconsin-Madison
- S. Ryu
- Department of Materials Science and Engineering, University of Wisconsin-Madison
- H. Lee
- Department of Materials Science and Engineering, University of Wisconsin-Madison
- T. H. Kim
- Department of Materials Science and Engineering, University of Wisconsin-Madison
- Y. Yuan
- Department of Materials Science and Engineering, The Pennsylvania State University
- J. A. Zorn
- Department of Materials Science and Engineering, The Pennsylvania State University
- S. Lei
- Department of Materials Science and Engineering, The Pennsylvania State University
- W. P. Gao
- Department of Materials Science and Engineering, University of California
- T. Tybell
- Department of Electronic Systems, Norwegian University of Science and Technology
- V. Gopalan
- Department of Materials Science and Engineering, The Pennsylvania State University
- X. Q. Pan
- Department of Materials Science and Engineering, University of California
- A. Gruverman
- Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska
- L. Q. Chen
- Department of Materials Science and Engineering, The Pennsylvania State University
- E. Y. Tsymbal
- Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska
- C. B. Eom
- Department of Materials Science and Engineering, University of Wisconsin-Madison
- DOI
- https://doi.org/10.1038/s41467-021-26660-7
- Journal volume & issue
-
Vol. 12,
no. 1
pp. 1 – 8
Abstract
In-plane polarized ferroelectric thin films typically exhibit complicated multidomain states, not desirable for optoelectronic device performance. Here, the authors combine interfacial symmetry engineering and anisotropic strain to design single-domain in-plane polarized ferroelectric BaTiO3 films.
