The algorithmic programs for optimal growth conditions selection in growing of GaAs-based epitaxial layers by MOCVD.

Abstract

The algorithm was worked out, witch allows to define obtained GaAs-based layers characteristics and the most significant epitaxy process technological parameters on the base of half-empiric dependences, if MOCVD process carriage conditions are known.

Keywords

• algorithm
• epitaxy
• imitation
• mocvd
• simulator