Научный вестник МГТУ ГА (Nov 2016)
EXTRACTION OF ON-BOARD TRM HIGH-POWER MICROWAVE HEMT PARAMETERS
Abstract
Analytical nonlinear model of high-power microwave HEMT with parallel resonance circuits was designed. Extraction method of high-power HEMT parameters without optimization usage was proposed and described. Test board for high-power HEMT measurement for 0.5 - 20 GHz frequency band was designed. Reliability of the proposed method and nonlinear model is confirmed by experimental data.