MoS<sub>2</sub> Transistors with Low Schottky Barrier Contact by Optimizing the Interfacial Layer Thickness

Jinbing Cheng; Junbao He; Chunying Pu; Congbin Liu; Xiaoyu Huang; Deyang Zhang; Hailong Yan; Paul K. Chu

doi:10.3390/en15176169

Energies (Aug 2022)

MoS<sub>2</sub> Transistors with Low Schottky Barrier Contact by Optimizing the Interfacial Layer Thickness

Jinbing Cheng,
Junbao He,
Chunying Pu,
Congbin Liu,
Xiaoyu Huang,
Deyang Zhang,
Hailong Yan,
Paul K. Chu

Affiliations

Jinbing Cheng: Henan International Joint Laboratory of MXene Materials Microstructure, College of Physics and Electronic Engineering, Nanyang Normal University, Nanyang 473061, China
Junbao He: Henan International Joint Laboratory of MXene Materials Microstructure, College of Physics and Electronic Engineering, Nanyang Normal University, Nanyang 473061, China
Chunying Pu: Henan International Joint Laboratory of MXene Materials Microstructure, College of Physics and Electronic Engineering, Nanyang Normal University, Nanyang 473061, China
Congbin Liu: Henan International Joint Laboratory of MXene Materials Microstructure, College of Physics and Electronic Engineering, Nanyang Normal University, Nanyang 473061, China
Xiaoyu Huang: Henan International Joint Laboratory of MXene Materials Microstructure, College of Physics and Electronic Engineering, Nanyang Normal University, Nanyang 473061, China
Deyang Zhang: Key Laboratory of Microelectronics and Energy of Henan Province, Engineering Research Center for MXene Energy Storage Materials of Henan Province, Henan Joint International Research Laboratory of New Energy Storage Technology, Xinyang Normal University, Xinyang 464000, China
Hailong Yan: Key Laboratory of Microelectronics and Energy of Henan Province, Engineering Research Center for MXene Energy Storage Materials of Henan Province, Henan Joint International Research Laboratory of New Energy Storage Technology, Xinyang Normal University, Xinyang 464000, China
Paul K. Chu: Department of Physics, Department of Materials Science & Engineering, and Department of Biomedical Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, China

DOI: https://doi.org/10.3390/en15176169
Journal volume & issue: Vol. 15, no. 17
p. 6169

Abstract

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Molybdenum disulfide (MoS2) has attracted great attention from researchers because of its large band gap, good mechanical toughness and stable physical properties; it has become the ideal material for the next-generation optoelectronic devices. However, the large Schottky barrier height (ΦB) and contact resistance are obstacles hampering the fabrication of high-power MoS2 transistors. The electronic transport characteristics of MoS2 transistors with two different contact structures are investigated in detail, including a copper (Cu) metal–MoS2 channel and copper (Cu) metal–TiO2-MoS2 channel. Contact optimization is conducted by adjusting the thickness of the TiO2 interlayer between the metal and MoS2. The metal-interlayer-semiconductor (MIS) structure with a 1.5 nm thick TiO2 layer has a smaller Schottky barrier of 22 meV. The results provide insights into the engineering of MIS contacts and interfaces to improve transistor characteristics.

Published in Energies

ISSN: 1996-1073 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Technology
Website: http://www.mdpi.com/journal/energies

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