Changes in output parameters of 1 MeV electron irradiated upright metamorphic GaInP/GaInAs/Ge triple junction solar cell

M. Heini; A. Aierken; Z. H. Li; X. F. Zhao; M. Sailai; X. B. Shen; Y. Xu; H. T. Liu; Y. D. Li; Q. Guo; C. M. Liu

doi:10.1063/1.5049367

AIP Advances (Oct 2018)

Changes in output parameters of 1 MeV electron irradiated upright metamorphic GaInP/GaInAs/Ge triple junction solar cell

M. Heini,
A. Aierken,
Z. H. Li,
X. F. Zhao,
M. Sailai,
X. B. Shen,
Y. Xu,
H. T. Liu,
Y. D. Li,
Q. Guo,
C. M. Liu

Affiliations

M. Heini: Key Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Phys. & Chem., Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, P. R. China
A. Aierken: Key Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Phys. & Chem., Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, P. R. China
Z. H. Li: Key Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Phys. & Chem., Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, P. R. China
X. F. Zhao: Key Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Phys. & Chem., Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, P. R. China
M. Sailai: Key Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Phys. & Chem., Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, P. R. China
X. B. Shen: Key Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Phys. & Chem., Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, P. R. China
Y. Xu: Key Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Phys. & Chem., Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, P. R. China
H. T. Liu: Key Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Phys. & Chem., Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, P. R. China
Y. D. Li: Key Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Phys. & Chem., Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, P. R. China
Q. Guo: Key Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Phys. & Chem., Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, P. R. China
C. M. Liu: National Key Laboratory of Materials Behavior and Evaluation Technology in Space Environment, Harbin Institute of Technology, No. 92 West Nangang Road, Harbin 150001, P. R. China

DOI: https://doi.org/10.1063/1.5049367
Journal volume & issue: Vol. 8, no. 10
pp. 105022 – 105022-8

Abstract

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The changes in output parameters of 1 MeV electron irradiated MOCVD grown upright metamorphic (UMM) GaInP/GaInAs/Ge triple junction solar cells have been studied. Non-ionizing energy loss (NIEL) approach and MULASSIS simulation were applied for analyzing the effects of irradiation induced displacement damage on cell performance. The influence of base thickness on radiation resistance has been studied by changing the base thickness of top GaInP and middle GaInAs subcell, respectively. The experimental results show that the electrical parameters, Voc, Isc, and Pmax of UMM cell degrade with the increase of electron fluence. The change of spectra response indicates middle GaInAs subcell degrades more severe than top GaInP subcells, and the base thickness of two subcells has different effects on spectra response of UMM cell.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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