Double Gold/Nitrogen Nanosecond-Laser-Doping of Gold-Coated Silicon Wafer Surfaces in Liquid Nitrogen

Abstract

A novel double-impurity doping process for silicon (Si) surfaces was developed, utilizing nanosecond-laser melting of an 11 nm thick gold (Au) top film and a Si wafer substrate in a laser plasma-activated liquid nitrogen (LN) environment. Scanning electron microscopy revealed a fluence- and exposure-independent surface micro-spike topography, while energy-dispersive X-ray spectroscopy identified minor Au (~0.05 at. %) and major N (~1–2 at. %) dopants localized within a 0.5 μm thick surface layer and the slight surface post-oxidation of the micro-relief (oxygen (O), ~1.5–2.5 at. %). X-ray photoelectron spectroscopy was used to identify the bound surface (SiNx) and bulk doping chemical states of the introduced nitrogen (~10 at. %) and the metallic (3N4 structure. In contrast, Fourier transform infrared (FT-IR) reflectance and transmittance studies exhibited only broad structureless absorption bands in the range of 600–5500 cm−1 related to dopant absorption and light trapping in the surface micro-relief. The room-temperature electrical characteristics of the laser double-doped Si layer—a high carrier mobility of 1050 cm2/Vs and background carrier sheet concentration of ~2 × 1010 cm−2 (bulk concentration ~1014–1015 cm−3)—are superior to previously reported parameters of similar nitrogen-implanted/annealed Si samples. This novel facile double-element laser-doping procedure paves the way to local maskless on-demand introductions of multiple intra-gap intermediate donor and acceptor bands in Si, providing related multi-wavelength IR photoconductivity for optoelectronic applications.

Keywords

• nanosecond-laser
• Si wafer
• top Au film
• liquid nitrogen environment
• Au/N double-element doping
• nano-recrystallization of Si