Quantum magnetoconductivity characterization of interface disorder in indium-tin-oxide films on fused silica

Abstract

Disorder in semiconductors may lead to quantum interference and positive magnetoconductivity, whose maximum value in 3D is independent of material properties. Here, an apparent violation of this upper bound, in Sn-doped In2O3 films on fused silica, is explained by a model that accounts for additional disorder close to the interface.