Enhanced electrical and magnetic properties in La0.7Sr0.3MnO3 thin films deposited on CaTiO3-buffered silicon substrates

C. Adamo; L. Méchin; T. Heeg; M. Katz; S. Mercone; B. Guillet; S. Wu; J.-M. Routoure; J. Schubert; W. Zander; R. Misra; P. Schiffer; X. Q. Pan; D. G. Schlom

doi:10.1063/1.4915486

APL Materials (Jun 2015)

Enhanced electrical and magnetic properties in La0.7Sr0.3MnO3 thin films deposited on CaTiO3-buffered silicon substrates

C. Adamo,
L. Méchin,
T. Heeg,
M. Katz,
S. Mercone,
B. Guillet,
S. Wu,
J.-M. Routoure,
J. Schubert,
W. Zander,
R. Misra,
P. Schiffer,
X. Q. Pan,
D. G. Schlom

Affiliations

C. Adamo: Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853-1501, USA
L. Méchin: Groupe de Recherche en Informatique, Image, Automatique et Instrumentation de Caen, (GREYC-UMR 6072), CNRS-ENSICAEN—Université de Caen Basse-Normandie, 6 Boulevard Maréchal Juin, 14050 Caen Cedex, France
T. Heeg: Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853-1501, USA
M. Katz: Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA
S. Mercone: Laboratoire de Sciences des Procédés et des Matériaux, UPR3407, CNRS, Institut Galilee, Universite Paris-Nord, Villetaneuse, France
B. Guillet: Groupe de Recherche en Informatique, Image, Automatique et Instrumentation de Caen, (GREYC-UMR 6072), CNRS-ENSICAEN—Université de Caen Basse-Normandie, 6 Boulevard Maréchal Juin, 14050 Caen Cedex, France
S. Wu: Groupe de Recherche en Informatique, Image, Automatique et Instrumentation de Caen, (GREYC-UMR 6072), CNRS-ENSICAEN—Université de Caen Basse-Normandie, 6 Boulevard Maréchal Juin, 14050 Caen Cedex, France
J.-M. Routoure: Groupe de Recherche en Informatique, Image, Automatique et Instrumentation de Caen, (GREYC-UMR 6072), CNRS-ENSICAEN—Université de Caen Basse-Normandie, 6 Boulevard Maréchal Juin, 14050 Caen Cedex, France
J. Schubert: Peter Grünberg Institute (PGI9-IT), JARA-Fundamentals of Future Information Technology, Research Centre Jülich, Jülich D-52425, Germany
W. Zander: Peter Grünberg Institute (PGI9-IT), JARA-Fundamentals of Future Information Technology, Research Centre Jülich, Jülich D-52425, Germany
R. Misra: Department of Physics and Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
P. Schiffer: Department of Physics and Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
X. Q. Pan: Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA
D. G. Schlom: Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853-1501, USA

DOI: https://doi.org/10.1063/1.4915486
Journal volume & issue: Vol. 3, no. 6
pp. 062504 – 062504-10

Abstract

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We investigate the suitability of an epitaxial CaTiO3 buffer layer deposited onto (100) Si by reactive molecular-beam epitaxy (MBE) for the epitaxial integration of the colossal magnetoresistive material La0.7Sr0.3MnO3 with silicon. The magnetic and electrical properties of La0.7Sr0.3MnO3 films deposited by MBE on CaTiO3-buffered silicon (CaTiO3/Si) are compared with those deposited on SrTiO3-buffered silicon (SrTiO3/Si). In addition to possessing a higher Curie temperature and a higher metal-to-insulator transition temperature, the electrical resistivity and 1/f noise level at 300 K are reduced by a factor of two in the heterostructure with the CaTiO3 buffer layer. These results are relevant to device applications of La0.7Sr0.3MnO3 thin films on silicon substrates.

Published in APL Materials

ISSN: 2166-532X (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Technology: Chemical technology: Biotechnology; Science: Physics
Website: http://aplmaterials.aip.org

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