Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84 Multiple Quantum Wells on Ge Virtual Substrate

Hung-Pin Hsu; Pong-Hong Yang; Jeng-Kuang Huang; Po-Hung Wu; Ying-Sheng Huang; Cheng Li; Shi-Hao Huang; Kwong-Kau Tiong

doi:10.1155/2013/298190

Advances in Condensed Matter Physics (Jan 2013)

Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84 Multiple Quantum Wells on Ge Virtual Substrate

Hung-Pin Hsu,
Pong-Hong Yang,
Jeng-Kuang Huang,
Po-Hung Wu,
Ying-Sheng Huang,
Cheng Li,
Shi-Hao Huang,
Kwong-Kau Tiong

Affiliations

Hung-Pin Hsu: Department of Electronic Engineering, Ming Chi University of Technology, 84 Gungjuan Road, Taishan, Taipei 243, Taiwan
Pong-Hong Yang: Department of Electronic Engineering, Ming Chi University of Technology, 84 Gungjuan Road, Taishan, Taipei 243, Taiwan
Jeng-Kuang Huang: Department of Electronic Engineering, Ming Chi University of Technology, 84 Gungjuan Road, Taishan, Taipei 243, Taiwan
Po-Hung Wu: Department of Electronic Engineering, National Taiwan University of Science and Technology, 43, Section 4, Keelung Road, Taipei 106, Taiwan
Ying-Sheng Huang: Department of Electronic Engineering, National Taiwan University of Science and Technology, 43, Section 4, Keelung Road, Taipei 106, Taiwan
Cheng Li: Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China
Shi-Hao Huang: Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China
Kwong-Kau Tiong: Department of Electrical Engineering, National Taiwan Ocean University, 2 Pei-Ning Road, Keelung 202, Taiwan

DOI: https://doi.org/10.1155/2013/298190
Journal volume & issue: Vol. 2013

Abstract

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We report a detailed characterization of a Ge/Si0.16Ge0.84 multiple quantum well (MQW) structure on Ge-on-Si virtual substrate (VS) grown by ultrahigh vacuum chemical vapor deposition by using temperature-dependent photoreflectance (PR) in the temperature range from 10 to 300 K. The PR spectra revealed a wide range of optical transitions from the MQW region as well as transitions corresponding to the light-hole and heavy-hole splitting energies of Ge-on-Si VS. A detailed comparison of PR spectral line shape fits and theoretical calculation led to the identification of various quantum-confined interband transitions. The temperature-dependent PR spectra of Ge/Si0.16Ge0.84 MQW were analyzed using Varshni and Bose-Einstein expressions. The parameters that describe the temperature variations of various quantum-confined interband transition energies were evaluated and discussed.

Published in Advances in Condensed Matter Physics

ISSN: 1687-8108 (Print); 1687-8124 (Online)
Publisher: Hindawi Limited
Country of publisher: United Kingdom
LCC subjects: Science: Physics
Website: https://onlinelibrary.wiley.com/journal/4042

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