Recent progress of photodetector based on carbon nanotube film and application in optoelectronic integration

Abstract

Due to its remarkable electrical and optical capabilities, optoelectronic devices based on the semiconducting single-walled carbon nanotube (s-SWCNT) have been studied extensively in the last two decades. First, s-SWCNT is a direct bandgap semiconductor with a high infrared absorption coefficient and high electron/hole mobility. In addition, as a typical one-dimensional material, there is no lattice mismatch between s-SWCNT and any substrates. Another advantage is that the optoelectronic devices of s-SWCNT can be processed at low temperatures. s-SWCNT has intriguing potential and applications in solar cells, light-emitting diodes (LEDs), photodetectors, and three-dimensional (3D) optoelectronic integration. In recent years, along with the advancement of solution purification technology, the high-purity s-SWCNTs film has laid the foundation for constructing large-area, homogenous, and high-performance optoelectronic devices. In this review, optoelectronic devices based on s-SWCNTs film and related topics are reviewed, including the preparation of high purity s-SWCNTs film, the progress of photodetectors based on the s-SWCNTs film, and challenges of s-SWCNTs film photodetectors.

Keywords

• carbon nanotube
• high purity semiconducting single-walled carbon nanotubes (s-swcnts) film
• photodetectors
• optoelectronic integration